Review of SiGe HBTs on SOI

by Mitrovic, I.Z, Buiu, O., Hall, S., Bagnall, D., Ashburn, P.
Published 2005

Improved vertical MOSFET performance using an epitaxial channel and stacked silicon-insulator structure

by Uchino, T., Gili, E., Tan, L., Buiu, O., Hall, S., Ashburn, P.
Published 2012

Improved sub-threshold slope in short channel vertical MOSFETs using FILOX oxidation

by Hakim, M M A, Tan, L., Buiu, O., Redman-White, W., Hall, S., Ashburn, P
Published 2009

Recent developments in deca-nanometer vertical MOSFETs

by Hall, S., Donaghy, S., Buiu, O., Gili, E., Uchino, T., Kunz, V.D, de Groot, C.H, Ashburn, P.
Published 2004

Shallow junctions on pillar sidewalls for sub-100-nm vertical MOSFETs

by Gili, E., Uchino, T., Hakim, M.M.A, de Groot, C.H, Buiu, O., Hall, S., Ashburn, Peter
Published 2006

1/f Noise and Generation/Recombination Noise in SiGe HBTs on SOI

by Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., Mitrovic, I., El Mubarek, H.A.W, Ashburn, P.
Published 2005

Electrical and Materials Characterisation of GSMBE Grown Si1-x-yGexCy Layers for Heterojunction Bipolar Transistor Applications

by Mitrovic, I.Z, Buiu, O., Hall, S., Zhang, J., Wang, Y., Hemment, P.L.F, El Mubarek, H.A.W, Ashburn, P.
Published 2005

GSMBE growth and structural characterisation of SiGeC layers for HBT

by Zhang, J., Neave, J.H, Li, X.B, Fewster, P.F, El Mubarek, H.A. W., Ashburn, P., Mitrovic, I.Z, Buiu, O., Hall, S.
Published 2005

SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers

by Bain, M., El Mubarek, H.A.W, Bonar, J.M, Wang, Y., Buiu, O., Gamble, H., Armstrong, B.M, Hemment, P.L.F, Hall, S., Ashburn, P.
Published 2005