Simulation of N-Type Junctionless Double-Gate Poly-Si Nanowire Transistors

by Kang-Ping Peng, 彭康平
Published 2013

Self-Organized Ge Nanospherical Gate/SiO₂/Si_0.15Ge_0.85–Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio

by Po-Hsiang Liao, Kang-Ping Peng, Horng-Chih Lin, Thomas George, Pei-Wen Li
Published 2019-01-01

Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe

by Tsung-Lin Huang, Kang-Ping Peng, Ching-Lun Chen, Horng-Chih Lin, Tom George, Pei-Wen Li
Published 2019-08-01