Passivation of defect states in surface and edge regions on pn-junction Si solar cells by use of hydrogen cyanide solutions

by Takahashi Masao, Shishido Takeru, Iwasa Hitoo, Kobayashi Hikaru
Published 2009-06-01

Study of density of interface states in MOS structure with ultrathin NAOS oxide

by Jurečka Stanislav, Kobayashi Hikaru, Kim Woo-Byoung, Takahashi Masao, Pinčík Emil
Published 2012-02-01

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

by Hockicko Peter, Bury Peter, Sidor Peter, Kobayashi Hikaru, Takahashi Masao, Yanase Takashi
Published 2011-02-01

On formation of thin SiO2/a-Si:H interface when biased oxidized semiconductor surface interacts with plasma or liquid solution

by Pinčík Emil, Kobayashi Hikaru, Takahashi Masao, Brunner Róbert, Jurečka Stanislav, Rusnák Jaroslav
Published 2007-09-01

Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

by Bury Peter, Kobayashi Hikaru, Takahashi Masao, Imamura Kentaro, Sidor Peter, Černobila František
Published 2009-06-01

On the topographic and optical properties of SiC/SiO2 surfaces

by Jureckova Stanislav, Jureckova Maria, Chovanec Ferdinand, Kobayashi Hikaru, Takahashi Masao, Mikula Milan, Pina Emil
Published 2009-06-01