III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz
We review Ill-Nitride optoelectronic device technologies with an emphasis on recent breakthroughs. We start with a brief summary of historical accomplishments and then report the state of the art in three key spectral regimes as follows: 1) Ultraviolet (AIGaN-based avalanche photodiodes, single phot...
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| Format: | Article |
| Language: | English |
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IEEE
2011-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/5772683/ |