Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process
The stable operation of transistors under a positive bias stress (PBS) is achieved using Hf incorporated into InOx-based thin films processed at relatively low temperatures (150 to 250 °C). The mobilities of the Hf-InOx thin-film transistors (TFTs) are higher than 8 cm2/Vs. The TFTs not...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4905903 |