Effect of annealing on the electrophysical properties of CdTe/HgCdTe passivation interface by the capacitance–voltage characteristics of the metal–insulator–semiconductor structures

Effect of annealing on the electrophysical properties of CdTe/HgCdTe passivation interface by the capacitance–voltage characteristics of the metal–insulator–semiconductor structures

The capacitance–voltage characteristics of metal–insulator–semiconductor structures based on Hg1−xCdxTe (x = 0.218) with CdTe passivation are studied before and after the passivation annealing process. We found that after vacuum annealing at 300 °C for 24 h, the micromorphology of the passivation la...

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Bibliographic Details
Main Authors: Xi Wang, Kai He, Xing Chen, Yang Li, Chun Lin, Qinyao Zhang, Zhenhua Ye, Liwei Xin, Guilong Gao, Xin Yan, Gang Wang, Yiheng Liu, Tao Wang, Jinshou Tian
Format: Article
Language:English
Published: AIP Publishing LLC 2020-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0021073

Internet

http://dx.doi.org/10.1063/5.0021073

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