Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping
The photoelectric properties and physical mechanism of AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with the superlattice p-type doping layer (PSL) are studied numerically and compared with the Al-composition (50%) conventional p-type layer AlGaN-based DUV-LEDs. The extraordinary de...
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doaj-0cbdc233187d4b908c9422c0866e67f42021-03-29T17:39:43ZengIEEEIEEE Photonics Journal1943-06552017-01-01931710.1109/JPHOT.2017.26993227914666Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type DopingQianying Si0Hangyang Chen1Shuping Li2Shiqiang Lu3Junyong Kang4Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, ChinaFujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, ChinaFujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, ChinaFujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, ChinaFujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, ChinaThe photoelectric properties and physical mechanism of AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with the superlattice p-type doping layer (PSL) are studied numerically and compared with the Al-composition (50%) conventional p-type layer AlGaN-based DUV-LEDs. The extraordinary design of DUV-LEDs with varied barrier PSL has been investigated by the advanced physical model of semiconductor device (APSYS) software by comparing the internal quantum efficiency, light output power, electroluminescence intensity, distributions of carrier concentration, and energy band diagrams. As a result of hole injection augmentation and electronic leakage reduction, the property of AlGaN-based DUV-LED with the PSL has been enhanced significantly. Moreover, the 55%-Al-composition of the superlattice barrier p-type doping layer greatly reduces the effective potential height for holes in the valence band, which is beneficial for hole injection from the PSL. The new structure improves the properties of DUV-LED and shows remarkable output performance.https://ieeexplore.ieee.org/document/7914666/AlGaNsuperlattice p-type doping layerdeep ultraviolet light-emitting diodes (DUV-LEDs) |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Qianying Si Hangyang Chen Shuping Li Shiqiang Lu Junyong Kang |
spellingShingle |
Qianying Si Hangyang Chen Shuping Li Shiqiang Lu Junyong Kang Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping IEEE Photonics Journal AlGaN superlattice p-type doping layer deep ultraviolet light-emitting diodes (DUV-LEDs) |
author_facet |
Qianying Si Hangyang Chen Shuping Li Shiqiang Lu Junyong Kang |
author_sort |
Qianying Si |
title |
Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping |
title_short |
Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping |
title_full |
Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping |
title_fullStr |
Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping |
title_full_unstemmed |
Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping |
title_sort |
improved characteristics of algan-based deep ultraviolet light-emitting diodes with superlattice p-type doping |
publisher |
IEEE |
series |
IEEE Photonics Journal |
issn |
1943-0655 |
publishDate |
2017-01-01 |
description |
The photoelectric properties and physical mechanism of AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with the superlattice p-type doping layer (PSL) are studied numerically and compared with the Al-composition (50%) conventional p-type layer AlGaN-based DUV-LEDs. The extraordinary design of DUV-LEDs with varied barrier PSL has been investigated by the advanced physical model of semiconductor device (APSYS) software by comparing the internal quantum efficiency, light output power, electroluminescence intensity, distributions of carrier concentration, and energy band diagrams. As a result of hole injection augmentation and electronic leakage reduction, the property of AlGaN-based DUV-LED with the PSL has been enhanced significantly. Moreover, the 55%-Al-composition of the superlattice barrier p-type doping layer greatly reduces the effective potential height for holes in the valence band, which is beneficial for hole injection from the PSL. The new structure improves the properties of DUV-LED and shows remarkable output performance. |
topic |
AlGaN superlattice p-type doping layer deep ultraviolet light-emitting diodes (DUV-LEDs) |
url |
https://ieeexplore.ieee.org/document/7914666/ |
work_keys_str_mv |
AT qianyingsi improvedcharacteristicsofalganbaseddeepultravioletlightemittingdiodeswithsuperlatticeptypedoping AT hangyangchen improvedcharacteristicsofalganbaseddeepultravioletlightemittingdiodeswithsuperlatticeptypedoping AT shupingli improvedcharacteristicsofalganbaseddeepultravioletlightemittingdiodeswithsuperlatticeptypedoping AT shiqianglu improvedcharacteristicsofalganbaseddeepultravioletlightemittingdiodeswithsuperlatticeptypedoping AT junyongkang improvedcharacteristicsofalganbaseddeepultravioletlightemittingdiodeswithsuperlatticeptypedoping |
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1724197465670811648 |