Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping

Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping

The photoelectric properties and physical mechanism of AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with the superlattice p-type doping layer (PSL) are studied numerically and compared with the Al-composition (50%) conventional p-type layer AlGaN-based DUV-LEDs. The extraordinary de...

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Bibliographic Details
Main Authors: Qianying Si, Hangyang Chen, Shuping Li, Shiqiang Lu, Junyong Kang
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
AlGaN
superlattice p-type doping layer
deep ultraviolet light-emitting diodes (DUV-LEDs)
Online Access:https://ieeexplore.ieee.org/document/7914666/

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