MODELLING OF SPINTRONIC DEVICES FOR APPLICATION IN RANDOM ACCESS MEMORY
The article analyzes the physical processes that occur in spin-valve structures during recording process which occurs in high-speed magnetic memory devices. Considered are devices using magnetization of the ferromagnetic layer through transmitting magnetic moment by polarized spin (STT-MRAM). Basic...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Lublin University of Technology
2020-03-01
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| Series: | Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska |
| Subjects: | |
| Online Access: | https://ph.pollub.pl/index.php/iapgos/article/view/915 |