Germination of <i>Phaseolus vulgaris</i> L. Seeds after a Short Treatment with a Powerful RF Plasma
Seeds of common bean (<i>Phaseolus vulgaris</i> L.), of the Etna variety, were treated with low-pressure oxygen plasma sustained by an inductively coupled radiofrequency discharge in the H-mode for a few seconds. The high-intensity treatment improved seed health in regard to fungal conta...
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doaj-121f3a5ba6194c49b37d97076adfad0a2021-07-15T15:36:18ZengMDPI AGInternational Journal of Molecular Sciences1661-65961422-00672021-06-01226672667210.3390/ijms22136672Germination of <i>Phaseolus vulgaris</i> L. Seeds after a Short Treatment with a Powerful RF PlasmaNina Recek0Matej Holc1Alenka Vesel2Rok Zaplotnik3Peter Gselman4Miran Mozetič5Gregor Primc6Jožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, SloveniaJožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, SloveniaJožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, SloveniaJožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, SloveniaInterkorn Ltd., Gančani 94, 9231 Beltinci, SloveniaJožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, SloveniaJožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, SloveniaSeeds of common bean (<i>Phaseolus vulgaris</i> L.), of the Etna variety, were treated with low-pressure oxygen plasma sustained by an inductively coupled radiofrequency discharge in the H-mode for a few seconds. The high-intensity treatment improved seed health in regard to fungal contamination. Additionally, it increased the wettability of the bean seeds by altering surface chemistry, as established by X-ray photoelectron spectroscopy, and increasing surface roughness, as seen with a scanning electron microscope. The water contact angle at the seed surface dropped to immeasurably low values after a second of plasma treatment. Hydrophobic recovery within a month returned those values to no more than half of the original water contact angle, even for beans treated for the shortest time (0.5 s). Increased wettability resulted in accelerated water uptake. The treatment increased the bean radicle length, which is useful for seedling establishment in the field. These findings confirm that even a brief plasma treatment is a useful technique for the disinfection and stimulation of radicle growth. The technique is scalable to large systems due to the short treatment times.https://www.mdpi.com/1422-0067/22/13/6672plasmaH-modebeanseedwater contact anglewater uptake |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Nina Recek Matej Holc Alenka Vesel Rok Zaplotnik Peter Gselman Miran Mozetič Gregor Primc |
spellingShingle |
Nina Recek Matej Holc Alenka Vesel Rok Zaplotnik Peter Gselman Miran Mozetič Gregor Primc Germination of <i>Phaseolus vulgaris</i> L. Seeds after a Short Treatment with a Powerful RF Plasma International Journal of Molecular Sciences plasma H-mode bean seed water contact angle water uptake |
author_facet |
Nina Recek Matej Holc Alenka Vesel Rok Zaplotnik Peter Gselman Miran Mozetič Gregor Primc |
author_sort |
Nina Recek |
title |
Germination of <i>Phaseolus vulgaris</i> L. Seeds after a Short Treatment with a Powerful RF Plasma |
title_short |
Germination of <i>Phaseolus vulgaris</i> L. Seeds after a Short Treatment with a Powerful RF Plasma |
title_full |
Germination of <i>Phaseolus vulgaris</i> L. Seeds after a Short Treatment with a Powerful RF Plasma |
title_fullStr |
Germination of <i>Phaseolus vulgaris</i> L. Seeds after a Short Treatment with a Powerful RF Plasma |
title_full_unstemmed |
Germination of <i>Phaseolus vulgaris</i> L. Seeds after a Short Treatment with a Powerful RF Plasma |
title_sort |
germination of <i>phaseolus vulgaris</i> l. seeds after a short treatment with a powerful rf plasma |
publisher |
MDPI AG |
series |
International Journal of Molecular Sciences |
issn |
1661-6596 1422-0067 |
publishDate |
2021-06-01 |
description |
Seeds of common bean (<i>Phaseolus vulgaris</i> L.), of the Etna variety, were treated with low-pressure oxygen plasma sustained by an inductively coupled radiofrequency discharge in the H-mode for a few seconds. The high-intensity treatment improved seed health in regard to fungal contamination. Additionally, it increased the wettability of the bean seeds by altering surface chemistry, as established by X-ray photoelectron spectroscopy, and increasing surface roughness, as seen with a scanning electron microscope. The water contact angle at the seed surface dropped to immeasurably low values after a second of plasma treatment. Hydrophobic recovery within a month returned those values to no more than half of the original water contact angle, even for beans treated for the shortest time (0.5 s). Increased wettability resulted in accelerated water uptake. The treatment increased the bean radicle length, which is useful for seedling establishment in the field. These findings confirm that even a brief plasma treatment is a useful technique for the disinfection and stimulation of radicle growth. The technique is scalable to large systems due to the short treatment times. |
topic |
plasma H-mode bean seed water contact angle water uptake |
url |
https://www.mdpi.com/1422-0067/22/13/6672 |
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