Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities
In this study, thin films of pure ZnO and doped ZnO with different percentages of gallium (0.5, 1, 2 and 4vt. %) on the glass substrates were deposited by using sol-gel method via spin coating technique at 2500 rpm, and all layers were annealed at 200°C for 1h and then Were examined their electrica...
|Main Authors:||, ,|
Nanoscience and Nanotechnology Research Center, University of Kashan
|Series:||Journal of Nanostructures|