Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities

In this study, thin films of pure ZnO and  doped ZnO with different percentages of gallium (0.5, 1, 2 and 4vt. %) on the glass substrates were deposited by using sol-gel method via spin coating technique at 2500 rpm, and all layers were annealed at 200°C for 1h and then Were examined their electrica...

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Bibliographic Details
Main Authors: Mohammad Hossein Manzari Tavakoli, Mehdi Ahmadi, Mohammad Sabet
Format: Article
Published: Nanoscience and Nanotechnology Research Center, University of Kashan 2017-07-01
Series:Journal of Nanostructures
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