Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
An effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce the surface potential and expand the quantum well under Fermi level. Besides, to satisfy charge balance, t...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2017-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/7857012/ |