MODEL OF BORON CLUSTERING IN SILICON

The model of formation and dissolution of neutral boron clusters in silicon has been developed. Numerical calculations showed that the model proposed describes well the experimental data obtained for rapid thermal annealing. Agreement with experiment is observed for clusters incorporating a small nu...

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Main Author:	O. I. Velichko
Format:	Article
Language:	Russian
Published:	Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:	Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:	boron silicon clustering stresses annealing
Online Access:	https://doklady.bsuir.by/jour/article/view/808

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record_format	Article
spelling	doaj-2f8e0f3424ed45989eaa3a274e026b742021-07-28T16:19:53ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-010859807MODEL OF BORON CLUSTERING IN SILICONO. I. Velichko0Belarusian State University of Informatics and RadioelectronicsThe model of formation and dissolution of neutral boron clusters in silicon has been developed. Numerical calculations showed that the model proposed describes well the experimental data obtained for rapid thermal annealing. Agreement with experiment is observed for clusters incorporating a small number (2-3) of boron atoms. The assumption about the increasing rate of the reaction of cluster formation allows one to explain the experimentally observed phenomenon of the hole concentration saturation at a high doping level. The increase in the reaction rate is a result of the crystalline lattice deformation due to the mismatch between the boron and silicon atomic radii.https://doklady.bsuir.by/jour/article/view/808boronsiliconclusteringstressesannealing
collection	DOAJ
language	Russian
format	Article
sources	DOAJ
author	O. I. Velichko
spellingShingle	O. I. Velichko MODEL OF BORON CLUSTERING IN SILICON Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki boron silicon clustering stresses annealing
author_facet	O. I. Velichko
author_sort	O. I. Velichko
title	MODEL OF BORON CLUSTERING IN SILICON
title_short	MODEL OF BORON CLUSTERING IN SILICON
title_full	MODEL OF BORON CLUSTERING IN SILICON
title_fullStr	MODEL OF BORON CLUSTERING IN SILICON
title_full_unstemmed	MODEL OF BORON CLUSTERING IN SILICON
title_sort	model of boron clustering in silicon
publisher	Educational institution «Belarusian State University of Informatics and Radioelectronics»
series	Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
issn	1729-7648
publishDate	2019-06-01
description	The model of formation and dissolution of neutral boron clusters in silicon has been developed. Numerical calculations showed that the model proposed describes well the experimental data obtained for rapid thermal annealing. Agreement with experiment is observed for clusters incorporating a small number (2-3) of boron atoms. The assumption about the increasing rate of the reaction of cluster formation allows one to explain the experimentally observed phenomenon of the hole concentration saturation at a high doping level. The increase in the reaction rate is a result of the crystalline lattice deformation due to the mismatch between the boron and silicon atomic radii.
topic	boron silicon clustering stresses annealing
url	https://doklady.bsuir.by/jour/article/view/808
work_keys_str_mv	AT oivelichko modelofboronclusteringinsilicon
_version_	1721267823915827200

MODEL OF BORON CLUSTERING IN SILICON

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