Artifact-free microstructures of the Cu–In reaction by using cryogenic broad argon beam ion polishing

Metallurgical systems containing substantial amounts of metallic indium have always been very challenging to investigate due to the difficulties involved with sample characterization caused by the substantial softness of indium. Such difficulties are overcome in this study, and artifact-free microst...

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Main Authors: H.T. Hung, P.T. Lee, C.H. Tsai, C.R. Kao
Format: Article
Language:English
Published: Elsevier 2020-11-01
Series:Journal of Materials Research and Technology
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785420317695
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spelling doaj-32a5257f1b034bb08dd524a77c1b389a2021-01-02T05:11:38ZengElsevierJournal of Materials Research and Technology2238-78542020-11-01961294612954Artifact-free microstructures of the Cu–In reaction by using cryogenic broad argon beam ion polishingH.T. Hung0P.T. Lee1C.H. Tsai2C.R. Kao3Department of Materials Science and Engineering, National Taiwan University, Taipei, TaiwanDepartment of Materials Science and Engineering, National Taiwan University, Taipei, TaiwanDepartment of Materials Science and Engineering, National Taiwan University, Taipei, TaiwanDepartment of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan; Advanced Research Center for Green Materials Science & Technology, National Taiwan University, Taipei, Taiwan; Corresponding author.Metallurgical systems containing substantial amounts of metallic indium have always been very challenging to investigate due to the difficulties involved with sample characterization caused by the substantial softness of indium. Such difficulties are overcome in this study, and artifact-free microstructures are successfully obtained for the first time by using cryogenic broad Ar beam ion polishing for the reactions between Cu and molten indium at 180 ℃. A two-phase layer consisting of Cu11In9 and In forms at the Cu/In interface. The growth of this layer follows parabolic kinetics, indicating that it is a diffusion-controlled process. Within the layer, Cu11In9 islands are larger near the In side than those near the Cu side, suggesting that coarsening of the Cu11In9 islands occurs. During the cooling process after the reaction, large faceted Cu11In9 islands heterogeneously precipitate over the two-phase layer. Simultaneously, nonfaceted Cu11In9 particles homogeneously precipitate within the In phase.http://www.sciencedirect.com/science/article/pii/S2238785420317695Interfacial reactionLiquid InSolid CuIntermetallicsMicrostructure
collection DOAJ
language English
format Article
sources DOAJ
author H.T. Hung
P.T. Lee
C.H. Tsai
C.R. Kao
spellingShingle H.T. Hung
P.T. Lee
C.H. Tsai
C.R. Kao
Artifact-free microstructures of the Cu–In reaction by using cryogenic broad argon beam ion polishing
Journal of Materials Research and Technology
Interfacial reaction
Liquid In
Solid Cu
Intermetallics
Microstructure
author_facet H.T. Hung
P.T. Lee
C.H. Tsai
C.R. Kao
author_sort H.T. Hung
title Artifact-free microstructures of the Cu–In reaction by using cryogenic broad argon beam ion polishing
title_short Artifact-free microstructures of the Cu–In reaction by using cryogenic broad argon beam ion polishing
title_full Artifact-free microstructures of the Cu–In reaction by using cryogenic broad argon beam ion polishing
title_fullStr Artifact-free microstructures of the Cu–In reaction by using cryogenic broad argon beam ion polishing
title_full_unstemmed Artifact-free microstructures of the Cu–In reaction by using cryogenic broad argon beam ion polishing
title_sort artifact-free microstructures of the cu–in reaction by using cryogenic broad argon beam ion polishing
publisher Elsevier
series Journal of Materials Research and Technology
issn 2238-7854
publishDate 2020-11-01
description Metallurgical systems containing substantial amounts of metallic indium have always been very challenging to investigate due to the difficulties involved with sample characterization caused by the substantial softness of indium. Such difficulties are overcome in this study, and artifact-free microstructures are successfully obtained for the first time by using cryogenic broad Ar beam ion polishing for the reactions between Cu and molten indium at 180 ℃. A two-phase layer consisting of Cu11In9 and In forms at the Cu/In interface. The growth of this layer follows parabolic kinetics, indicating that it is a diffusion-controlled process. Within the layer, Cu11In9 islands are larger near the In side than those near the Cu side, suggesting that coarsening of the Cu11In9 islands occurs. During the cooling process after the reaction, large faceted Cu11In9 islands heterogeneously precipitate over the two-phase layer. Simultaneously, nonfaceted Cu11In9 particles homogeneously precipitate within the In phase.
topic Interfacial reaction
Liquid In
Solid Cu
Intermetallics
Microstructure
url http://www.sciencedirect.com/science/article/pii/S2238785420317695
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