Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices

• Main Author: Lei Li
• Format: Article
• Language: English
• Published: MDPI AG 2019-04-01
• Series: Nanomaterials
• Subjects: GO@PBD/PMMA/GO@PBD heterostructure; ternary trilayer-structured memristor; graphene-based memory; tristable memory
• Online Access: https://www.mdpi.com/2079-4991/9/4/518

A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of <i>I</i>&#8211;<i>V</i> fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage.