Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

Nitrogen dioxide (NO2) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing a...

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Main Authors: Sihui Hou, Xinming Zhuang, Zuchong Yang, Junsheng Yu
Format: Article
Language:English
Published: MDPI AG 2018-03-01
Series:Nanomaterials
Subjects:
organic thin-film transistor (OTFT)
vertical annealing process
grain boundary
nitrogen dioxide (NO2)
gas sensor
Online Access:http://www.mdpi.com/2079-4991/8/4/203
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spelling doaj-38b4c263576b42fbaa2c313437bec1352020-11-24T22:48:13ZengMDPI AGNanomaterials2079-49912018-03-018420310.3390/nano8040203nano8040203Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film TransistorsSihui Hou0Xinming Zhuang1Zuchong Yang2Junsheng Yu3State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaNitrogen dioxide (NO2) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO2, while showing a preferential response to NO2 compared with SO2, NH3, CO, and H2S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) films were characterized by atomic force microscopy (AFM) in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO2 gas sensing performance.http://www.mdpi.com/2079-4991/8/4/203organic thin-film transistor (OTFT)vertical annealing processgrain boundarynitrogen dioxide (NO2)gas sensor
collection DOAJ
language English
format Article
sources DOAJ
author Sihui Hou
Xinming Zhuang
Zuchong Yang
Junsheng Yu
spellingShingle Sihui Hou
Xinming Zhuang
Zuchong Yang
Junsheng Yu
Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors
Nanomaterials
organic thin-film transistor (OTFT)
vertical annealing process
grain boundary
nitrogen dioxide (NO2)
gas sensor
author_facet Sihui Hou
Xinming Zhuang
Zuchong Yang
Junsheng Yu
author_sort Sihui Hou
title Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors
title_short Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors
title_full Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors
title_fullStr Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors
title_full_unstemmed Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors
title_sort effect of vertical annealing on the nitrogen dioxide response of organic thin film transistors
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2018-03-01
description Nitrogen dioxide (NO2) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO2, while showing a preferential response to NO2 compared with SO2, NH3, CO, and H2S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) films were characterized by atomic force microscopy (AFM) in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO2 gas sensing performance.
topic organic thin-film transistor (OTFT)
vertical annealing process
grain boundary
nitrogen dioxide (NO2)
gas sensor
url http://www.mdpi.com/2079-4991/8/4/203
work_keys_str_mv AT sihuihou effectofverticalannealingonthenitrogendioxideresponseoforganicthinfilmtransistors
AT xinmingzhuang effectofverticalannealingonthenitrogendioxideresponseoforganicthinfilmtransistors
AT zuchongyang effectofverticalannealingonthenitrogendioxideresponseoforganicthinfilmtransistors
AT junshengyu effectofverticalannealingonthenitrogendioxideresponseoforganicthinfilmtransistors
_version_ 1725678982729302016

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