GaAs/Ge/Si epitaxial substrates: Development and characteristics

GaAs/Ge/Si epitaxial substrates: Development and characteristics

We developed high quality 2-inch GaAs/Ge/Si (100) epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum s...

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Bibliographic Details
Main Authors: Yury Buzynin, Vladimir Shengurov, Boris Zvonkov, Alexander Buzynin, Sergey Denisov, Nikolay Baidus, Michail Drozdov, Dmitry Pavlov, Pavel Yunin
Format: Article
Language:English
Published: AIP Publishing LLC 2017-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4974498

Internet

http://dx.doi.org/10.1063/1.4974498

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