Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes
We fabricated indium gallium nitride (InGaN) red light-emitting diodes (LEDs) with a peak emission wavelength of 649 nm and investigated their electroluminescence (EL) properties. An additional separated peak in the EL spectrum of the red LEDs at 20 mA was observed at 465 nm. This additional peak al...
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doaj-41393365fe0248498f606fd6a39d3ae62021-09-25T23:57:52ZengMDPI AGCrystals2073-43522021-09-01111123112310.3390/cryst11091123Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting DiodesPavel Kirilenko0Zhe Zhuang1Daisuke Iida2Martin Velazquez-Rizo3Kazuhiro Ohkawa4Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaWe fabricated indium gallium nitride (InGaN) red light-emitting diodes (LEDs) with a peak emission wavelength of 649 nm and investigated their electroluminescence (EL) properties. An additional separated peak in the EL spectrum of the red LEDs at 20 mA was observed at 465 nm. This additional peak also exhibits a blue-shift with increasing currents as does the main emission peak. Using high-resolution microscopy, we observed many point-like emission spots in the EL emission images at the currents below 1 mA. However, these emission spots cannot be identified at currents above 5 mA because the red emission from quantum wells (QWs) is much stronger than that emitted by these spots. Finally, we demonstrate that these emission spots are related to the defects generated in red QWs. The measured In content was lower at the vicinity of the defects, which was regarded as the reason for separated short-wavelength emission in red InGaN LEDs.https://www.mdpi.com/2073-4352/11/9/1123InGaNlight-emitting diodelocalized emissionelectroluminescence mappingmultimicroscopy |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Pavel Kirilenko Zhe Zhuang Daisuke Iida Martin Velazquez-Rizo Kazuhiro Ohkawa |
spellingShingle |
Pavel Kirilenko Zhe Zhuang Daisuke Iida Martin Velazquez-Rizo Kazuhiro Ohkawa Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes Crystals InGaN light-emitting diode localized emission electroluminescence mapping multimicroscopy |
author_facet |
Pavel Kirilenko Zhe Zhuang Daisuke Iida Martin Velazquez-Rizo Kazuhiro Ohkawa |
author_sort |
Pavel Kirilenko |
title |
Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes |
title_short |
Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes |
title_full |
Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes |
title_fullStr |
Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes |
title_full_unstemmed |
Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes |
title_sort |
investigation of a separated short-wavelength peak in ingan red light-emitting diodes |
publisher |
MDPI AG |
series |
Crystals |
issn |
2073-4352 |
publishDate |
2021-09-01 |
description |
We fabricated indium gallium nitride (InGaN) red light-emitting diodes (LEDs) with a peak emission wavelength of 649 nm and investigated their electroluminescence (EL) properties. An additional separated peak in the EL spectrum of the red LEDs at 20 mA was observed at 465 nm. This additional peak also exhibits a blue-shift with increasing currents as does the main emission peak. Using high-resolution microscopy, we observed many point-like emission spots in the EL emission images at the currents below 1 mA. However, these emission spots cannot be identified at currents above 5 mA because the red emission from quantum wells (QWs) is much stronger than that emitted by these spots. Finally, we demonstrate that these emission spots are related to the defects generated in red QWs. The measured In content was lower at the vicinity of the defects, which was regarded as the reason for separated short-wavelength emission in red InGaN LEDs. |
topic |
InGaN light-emitting diode localized emission electroluminescence mapping multimicroscopy |
url |
https://www.mdpi.com/2073-4352/11/9/1123 |
work_keys_str_mv |
AT pavelkirilenko investigationofaseparatedshortwavelengthpeakininganredlightemittingdiodes AT zhezhuang investigationofaseparatedshortwavelengthpeakininganredlightemittingdiodes AT daisukeiida investigationofaseparatedshortwavelengthpeakininganredlightemittingdiodes AT martinvelazquezrizo investigationofaseparatedshortwavelengthpeakininganredlightemittingdiodes AT kazuhiroohkawa investigationofaseparatedshortwavelengthpeakininganredlightemittingdiodes |
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