Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes
We fabricated indium gallium nitride (InGaN) red light-emitting diodes (LEDs) with a peak emission wavelength of 649 nm and investigated their electroluminescence (EL) properties. An additional separated peak in the EL spectrum of the red LEDs at 20 mA was observed at 465 nm. This additional peak al...
Main Authors: | Pavel Kirilenko, Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-09-01
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Series: | Crystals |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4352/11/9/1123 |
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