Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions

Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions

Increasing demands for mass storage and new paradigm computing ask for non-volatile memories that can meet reliability requirements. Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based (HZO) memory has attracted growing attention due to its excellent CMOS compatib...

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Bibliographic Details
Main Authors: Zhiwei Liu, Puyang Cai, Songhai Yu, Linxin Han, Runsheng Wang, Yanqing Wu, Pengpeng Ren, Zhigang Ji, Ru Huang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Nonvolatile memory
oxygen vacancy
TDDB
ferroelectric
HZO
breakdown
Online Access:https://ieeexplore.ieee.org/document/9509278/

Internet

https://ieeexplore.ieee.org/document/9509278/

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