Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions
Abstract Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2018-04-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2513-6 |