A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs

A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs

We fabricate an operational amplifier (op-amp) composed with the coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19-TFTs and designed on a glass substrate in both dual gate (DG) and single gate (SG) structure for performance evaluation. Ha...

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Bibliographic Details
Main Authors: Abidur Rahaman, Yuanfeng Chen, Md. Mehedi Hasan, Jin Jang
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Coplanar <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTs
dual gate
single gate
operational amplifier (op-amp)
Online Access:https://ieeexplore.ieee.org/document/8738830/
Description
Summary:We fabricate an operational amplifier (op-amp) composed with the coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19-TFTs and designed on a glass substrate in both dual gate (DG) and single gate (SG) structure for performance evaluation. Having the yield of a total voltage gain (A<sub>v</sub>) of 23.5 dB, a cutoff frequency (f<sub>c</sub>) of 500 kHz, a unit gain frequency (f<sub>ug</sub>) of 2.37 MHz, gain-bandwidth product (GBWP) of 7500 kHz, a slew rate (up/down) of (2.1/1.2) V/&#x03BC;s, and a phase margin (PM) of 102&#x00B0; at a supply voltage of &#x00B1;10 V, the fabricated DG TFT op-amp demonstrates good performance among all a-IGZO-based literature.
ISSN:2168-6734

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