A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs

We fabricate an operational amplifier (op-amp) composed with the coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19-TFTs and designed on a glass substrate in both dual gate (DG) and single gate (SG) structure for performance evaluation. Ha...

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Main Authors:	Abidur Rahaman, Yuanfeng Chen, Md. Mehedi Hasan, Jin Jang
Format:	Article
Language:	English
Published:	IEEE 2019-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	Coplanar <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTs dual gate single gate operational amplifier (op-amp)
Online Access:	https://ieeexplore.ieee.org/document/8738830/

id	doaj-4f32feb5de944132b2785cd2a3ea29bb
record_format	Article
spelling	doaj-4f32feb5de944132b2785cd2a3ea29bb2021-03-29T18:48:59ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-01765566110.1109/JEDS.2019.29232088738830A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTsAbidur Rahaman0https://orcid.org/0000-0002-9100-4204Yuanfeng Chen1https://orcid.org/0000-0003-0999-3662Md. Mehedi Hasan2https://orcid.org/0000-0001-9030-8209Jin Jang3https://orcid.org/0000-0002-7572-5669Advanced Display Research Center, Kyung Hee University, Seoul, South KoreaAdvanced Display Research Center, Kyung Hee University, Seoul, South KoreaAdvanced Display Research Center, Kyung Hee University, Seoul, South KoreaAdvanced Display Research Center, Kyung Hee University, Seoul, South KoreaWe fabricate an operational amplifier (op-amp) composed with the coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19-TFTs and designed on a glass substrate in both dual gate (DG) and single gate (SG) structure for performance evaluation. Having the yield of a total voltage gain (A<sub>v</sub>) of 23.5 dB, a cutoff frequency (f<sub>c</sub>) of 500 kHz, a unit gain frequency (f<sub>ug</sub>) of 2.37 MHz, gain-bandwidth product (GBWP) of 7500 kHz, a slew rate (up/down) of (2.1/1.2) V/μs, and a phase margin (PM) of 102° at a supply voltage of ±10 V, the fabricated DG TFT op-amp demonstrates good performance among all a-IGZO-based literature.https://ieeexplore.ieee.org/document/8738830/Coplanar <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTsdual gatesingle gateoperational amplifier (op-amp)
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Abidur Rahaman Yuanfeng Chen Md. Mehedi Hasan Jin Jang
spellingShingle	Abidur Rahaman Yuanfeng Chen Md. Mehedi Hasan Jin Jang A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs IEEE Journal of the Electron Devices Society Coplanar <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTs dual gate single gate operational amplifier (op-amp)
author_facet	Abidur Rahaman Yuanfeng Chen Md. Mehedi Hasan Jin Jang
author_sort	Abidur Rahaman
title	A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs
title_short	A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs
title_full	A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs
title_fullStr	A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs
title_full_unstemmed	A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs
title_sort	high performance operational amplifier using coplanar dual gate a-igzo tfts
publisher	IEEE
series	IEEE Journal of the Electron Devices Society
issn	2168-6734
publishDate	2019-01-01
description	We fabricate an operational amplifier (op-amp) composed with the coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19-TFTs and designed on a glass substrate in both dual gate (DG) and single gate (SG) structure for performance evaluation. Having the yield of a total voltage gain (A<sub>v</sub>) of 23.5 dB, a cutoff frequency (f<sub>c</sub>) of 500 kHz, a unit gain frequency (f<sub>ug</sub>) of 2.37 MHz, gain-bandwidth product (GBWP) of 7500 kHz, a slew rate (up/down) of (2.1/1.2) V/μs, and a phase margin (PM) of 102° at a supply voltage of ±10 V, the fabricated DG TFT op-amp demonstrates good performance among all a-IGZO-based literature.
topic	Coplanar <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTs dual gate single gate operational amplifier (op-amp)
url	https://ieeexplore.ieee.org/document/8738830/
work_keys_str_mv	AT abidurrahaman ahighperformanceoperationalamplifierusingcoplanardualgateaigzotfts AT yuanfengchen ahighperformanceoperationalamplifierusingcoplanardualgateaigzotfts AT mdmehedihasan ahighperformanceoperationalamplifierusingcoplanardualgateaigzotfts AT jinjang ahighperformanceoperationalamplifierusingcoplanardualgateaigzotfts AT abidurrahaman highperformanceoperationalamplifierusingcoplanardualgateaigzotfts AT yuanfengchen highperformanceoperationalamplifierusingcoplanardualgateaigzotfts AT mdmehedihasan highperformanceoperationalamplifierusingcoplanardualgateaigzotfts AT jinjang highperformanceoperationalamplifierusingcoplanardualgateaigzotfts
_version_	1724196357858656256

A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs

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