%0 Article %A Abidur Rahaman %I IEEE %D 2019 %G English %B IEEE Journal of the Electron Devices Society %@ 2168-6734 %T A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs %U https://ieeexplore.ieee.org/document/8738830/ %X We fabricate an operational amplifier (op-amp) composed with the coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19-TFTs and designed on a glass substrate in both dual gate (DG) and single gate (SG) structure for performance evaluation. Having the yield of a total voltage gain (Av) of 23.5 dB, a cutoff frequency (fc) of 500 kHz, a unit gain frequency (fug) of 2.37 MHz, gain-bandwidth product (GBWP) of 7500 kHz, a slew rate (up/down) of (2.1/1.2) V/μs, and a phase margin (PM) of 102° at a supply voltage of ±10 V, the fabricated DG TFT op-amp demonstrates good performance among all a-IGZO-based literature.