A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs

A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs

We fabricate an operational amplifier (op-amp) composed with the coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19-TFTs and designed on a glass substrate in both dual gate (DG) and single gate (SG) structure for performance evaluation. Ha...

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Bibliographic Details
Main Authors: Abidur Rahaman, Yuanfeng Chen, Md. Mehedi Hasan, Jin Jang
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Coplanar <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTs
dual gate
single gate
operational amplifier (op-amp)
Online Access:https://ieeexplore.ieee.org/document/8738830/

Internet

https://ieeexplore.ieee.org/document/8738830/

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