Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis
We report a comprehensive investigation on stacking faults (SFs) in the 3C-SiC cross-section epilayer. 3C-SiC growth was performed in a horizontal hot-wall chemical vapour deposition (CVD) reactor. After the growth (85 microns thick), the silicon substrate was completely melted inside the CVD chambe...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-04-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/13/8/1837 |