Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications
The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based MetalW...
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MDPI AG
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/12/13/2509 |
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doaj-517c28e7e20d4d12944367d763bdf86a2020-11-24T21:54:38ZengMDPI AGEnergies1996-10732019-06-011213250910.3390/en12132509en12132509Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV ApplicationsSerhii Stepenko0Oleksandr Husev1Dmitri Vinnikov2Carlos Roncero-Clemente3Sergio Pires Pimentel4Elena Santasheva5Department of Electrical Power Engineering and Mechatronics, Tallinn University of Technology, 19086 Tallinn, EstoniaDepartment of Electrical Power Engineering and Mechatronics, Tallinn University of Technology, 19086 Tallinn, EstoniaDepartment of Electrical Power Engineering and Mechatronics, Tallinn University of Technology, 19086 Tallinn, EstoniaDepartment of Electrical, Electronic and Control Engineering, School of Industrial Engineering, University of Extremadura, 06006 Badajoz, SpainDepartment of Electrical Power Engineering and Mechatronics, Tallinn University of Technology, 19086 Tallinn, EstoniaDepartment of Electrical Power Engineering and Mechatronics, Tallinn University of Technology, 19086 Tallinn, EstoniaThe paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal−Oxide−Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions.https://www.mdpi.com/1996-1073/12/13/2509DC–AC convertersefficiencyneutral-point-clamped inverterPV applicationsPV invertersPV systemsquasi-z-sourcetwo-level inverterthree-level inverterconverter topologies |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Serhii Stepenko Oleksandr Husev Dmitri Vinnikov Carlos Roncero-Clemente Sergio Pires Pimentel Elena Santasheva |
| spellingShingle |
Serhii Stepenko Oleksandr Husev Dmitri Vinnikov Carlos Roncero-Clemente Sergio Pires Pimentel Elena Santasheva Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications Energies DC–AC converters efficiency neutral-point-clamped inverter PV applications PV inverters PV systems quasi-z-source two-level inverter three-level inverter converter topologies |
| author_facet |
Serhii Stepenko Oleksandr Husev Dmitri Vinnikov Carlos Roncero-Clemente Sergio Pires Pimentel Elena Santasheva |
| author_sort |
Serhii Stepenko |
| title |
Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications |
| title_short |
Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications |
| title_full |
Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications |
| title_fullStr |
Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications |
| title_full_unstemmed |
Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications |
| title_sort |
experimental comparison of two-level full-sic and three-level si–sic quasi-z-source inverters for pv applications |
| publisher |
MDPI AG |
| series |
Energies |
| issn |
1996-1073 |
| publishDate |
2019-06-01 |
| description |
The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal−Oxide−Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions. |
| topic |
DC–AC converters efficiency neutral-point-clamped inverter PV applications PV inverters PV systems quasi-z-source two-level inverter three-level inverter converter topologies |
| url |
https://www.mdpi.com/1996-1073/12/13/2509 |
| work_keys_str_mv |
AT serhiistepenko experimentalcomparisonoftwolevelfullsicandthreelevelsisicquasizsourceinvertersforpvapplications AT oleksandrhusev experimentalcomparisonoftwolevelfullsicandthreelevelsisicquasizsourceinvertersforpvapplications AT dmitrivinnikov experimentalcomparisonoftwolevelfullsicandthreelevelsisicquasizsourceinvertersforpvapplications AT carlosronceroclemente experimentalcomparisonoftwolevelfullsicandthreelevelsisicquasizsourceinvertersforpvapplications AT sergiopirespimentel experimentalcomparisonoftwolevelfullsicandthreelevelsisicquasizsourceinvertersforpvapplications AT elenasantasheva experimentalcomparisonoftwolevelfullsicandthreelevelsisicquasizsourceinvertersforpvapplications |
| _version_ |
1725866711799824384 |