Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films

Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films

Bi0.8Pr0.2Fe0.95Mn0.05O3/Bi3.96Gd0.04Ti2.95W0.05O12 (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO2/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films exhibited well-saturated...

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Bibliographic Details
Main Authors: Ming-Cheng Kao, Hone-Zern Chen, San-Lin Young, Kai-Huang Chen, Jung-Lung Chiang, Jen-Bin Shi
Format: Article
Language:English
Published: MDPI AG 2017-11-01
Series:Materials
Subjects:
ferroelectric properties
multiferroic
magnetic properties
RRAM
Online Access:https://www.mdpi.com/1996-1944/10/11/1327

Internet

https://www.mdpi.com/1996-1944/10/11/1327

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