Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots

Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots

Abstract This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observe...

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Bibliographic Details
Main Authors: Ihor I. Izhnin, Olena I. Fitsych, Anton A. Pishchagin, Andrei P. Kokhanenko, Alexander V. Voitsekhovskii, Stanislav M. Dzyadukh, Alexander I. Nikiforov
Format: Article
Language:English
Published: SpringerOpen 2017-02-01
Series:Nanoscale Research Letters
Subjects:
GeSi
Molecular-beam epitaxy
Quantum dot
Admittance spectroscopy
Energy levels of spatial quantization
Online Access:http://link.springer.com/article/10.1186/s11671-017-1916-0
Description
Summary:Abstract This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the temperature dependences of conductance of the investigated heterostructures. It is revealed that the second peak is broadened and corresponds to a system of closely lying energy levels.
ISSN:1931-7573
1556-276X

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