A Reactive and On-Chip Sensor Circuit for NBTI and PBTI Resilient SRAM Design
Process Variation (PV), Bias Temperature Instability (BTI) and Time-Dependent Dielectric Breakdown (TDDB) are the critical factors that affect the reliability of semiconductor chip design. They cause the system to be unstable and increase the soft error rate. In this paper, a compact on-chip degrada...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-02-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/2/326 |