Properties of double p+-InP/n-InGaAsP/n-InP heterojunctions obtained by LPE method

Properties of double p+-InP/n-InGaAsP/n-InP heterojunctions obtained by LPE method

The double epitaxial p+-InP/n-InGaAsP/n-InP heterostructures with coinciding electrical and metallurgical boundaries has been obtained. Such coincidence is achieved due to growing an additional buffer n-InP layer and decreasing the time for growing an emitter p+-InP layer heavily doped by zinc. Elec...

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Bibliographic Details
Main Authors: Vakiv N. M., Krukovskii S. I., Sukach A. V., Tetyorkin V. V., Mrykhin I. A., Mikhashchuk Yu. S., Krukovskii R. S.
Format: Article
Language:English
Published: Politehperiodika 2012-04-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
epitaxial heterostructures
liquid-phase epitaxy
doping
electroluminescence
photosensitivity
Online Access:http://www.tkea.com.ua/tkea/2012/2_2012/pdf/06.zip

Internet

http://www.tkea.com.ua/tkea/2012/2_2012/pdf/06.zip

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