Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices
Temperature measurements in AlGaN/GaN high electron mobility transistors are required for proper device design, modeling and achieving appropriate reliability. These measurements usually require sophisticated equipment and extensive calibration. This study evaluates the feasibility of temperature me...
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doaj-62c4cc8fda20421690a138359740c3d62021-03-29T18:42:35ZengIEEEIEEE Journal of the Electron Devices Society2168-67342014-01-012614514810.1109/JEDS.2014.23463916874488Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN DevicesOsvaldo Arenas0https://orcid.org/0000-0002-4446-2704Elias Al Alam1Alexandre Thevenot2Yvon Cordier3Abdelatif Jaouad4Vincent Aimez5Hassan Maher6Richard Ares7Francois Boone8Laboratoire Nanotechnologies Nanosystèmes-CNRS UMI-3463. Institut Interdisciplinaire d’Innovation Technologique, Université de Sherbrooke, Sherbrooke, QC, CanadaLaboratoire Nanotechnologies Nanosystèmes-CNRS UMI-3463. Institut Interdisciplinaire d’Innovation Technologique, Université de Sherbrooke, Sherbrooke, QC, CanadaLaboratoire Nanotechnologies Nanosystèmes-CNRS UMI-3463. Institut Interdisciplinaire d’Innovation Technologique, Université de Sherbrooke, Sherbrooke, QC, Canada Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, CNRS UPR-10, Valbonne, FranceLaboratoire Nanotechnologies Nanosystèmes-CNRS UMI-3463. Institut Interdisciplinaire d’Innovation Technologique, Université de Sherbrooke, Sherbrooke, QC, CanadaLaboratoire Nanotechnologies Nanosystèmes-CNRS UMI-3463. Institut Interdisciplinaire d’Innovation Technologique, Université de Sherbrooke, Sherbrooke, QC, CanadaLaboratoire Nanotechnologies Nanosystèmes-CNRS UMI-3463. Institut Interdisciplinaire d’Innovation Technologique, Université de Sherbrooke, Sherbrooke, QC, CanadaLaboratoire Nanotechnologies Nanosystèmes-CNRS UMI-3463. Institut Interdisciplinaire d’Innovation Technologique, Université de Sherbrooke, Sherbrooke, QC, CanadaLaboratoire Nanotechnologies Nanosystèmes-CNRS UMI-3463. Institut Interdisciplinaire d’Innovation Technologique, Université de Sherbrooke, Sherbrooke, QC, CanadaTemperature measurements in AlGaN/GaN high electron mobility transistors are required for proper device design, modeling and achieving appropriate reliability. These measurements usually require sophisticated equipment and extensive calibration. This study evaluates the feasibility of temperature measurements by integration of a Pt resistance thermal detector (RTD) in an “un-gated” transistor and evaluating their electrical interactions. The integrated RTD presents the advantage of being independent of the device. Micro RTD showed a linear response in the calibration interval (0 to 206 °C). Measured temperature values using the micro RTD are in agreement with 3D finite element simulations at multiple bias conditions in the “un-gated” transistor. Measurements show no noticeable electrical perturbation between the device and RTD under simultaneous operation.https://ieeexplore.ieee.org/document/6874488/ |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Osvaldo Arenas Elias Al Alam Alexandre Thevenot Yvon Cordier Abdelatif Jaouad Vincent Aimez Hassan Maher Richard Ares Francois Boone |
spellingShingle |
Osvaldo Arenas Elias Al Alam Alexandre Thevenot Yvon Cordier Abdelatif Jaouad Vincent Aimez Hassan Maher Richard Ares Francois Boone Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices IEEE Journal of the Electron Devices Society |
author_facet |
Osvaldo Arenas Elias Al Alam Alexandre Thevenot Yvon Cordier Abdelatif Jaouad Vincent Aimez Hassan Maher Richard Ares Francois Boone |
author_sort |
Osvaldo Arenas |
title |
Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices |
title_short |
Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices |
title_full |
Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices |
title_fullStr |
Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices |
title_full_unstemmed |
Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices |
title_sort |
integration of micro resistance thermometer detectors in algan/gan devices |
publisher |
IEEE |
series |
IEEE Journal of the Electron Devices Society |
issn |
2168-6734 |
publishDate |
2014-01-01 |
description |
Temperature measurements in AlGaN/GaN high electron mobility transistors are required for proper device design, modeling and achieving appropriate reliability. These measurements usually require sophisticated equipment and extensive calibration. This study evaluates the feasibility of temperature measurements by integration of a Pt resistance thermal detector (RTD) in an “un-gated” transistor and evaluating their electrical interactions. The integrated RTD presents the advantage of being independent of the device. Micro RTD showed a linear response in the calibration interval (0 to 206 °C). Measured temperature values using the micro RTD are in agreement with 3D finite element simulations at multiple bias conditions in the “un-gated” transistor. Measurements show no noticeable electrical perturbation between the device and RTD under simultaneous operation. |
url |
https://ieeexplore.ieee.org/document/6874488/ |
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