Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias
In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., <inline-formula> <tex-math notation="LaTeX">$1 \mathbf {\mathrm {\times }} 10 ^{19}$ </tex-math></inline-formula> cm <sup>−3&...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9480594/ |