A Comparative Study of the Curing Effects of Local and Global Thermal Annealing on a FinFET
Recently, localized thermal annealing has been spotlighted as an effective method to cure aged devices. The degraded gate oxide can be successfully cured by local annealing, which utilizes Joule heat inherently generated in the device. But, despite this advantage, there has been no study comparing t...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8815698/ |