Role of interfacial layer thickness on high-κ dielectric-based MOS devices
An attempt has been made to investigate the role of interfacial layer (IL) and its thickness on HfO2-based high-κ metal-oxide-semiconductor (MOS) devices. The capacitance–voltage (C–V) and current–voltage (I–V) characteristics have been simulated using Sentaurus TCAD software for two different IL th...
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| Format: | Article |
| Language: | English |
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World Scientific Publishing
2014-07-01
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| Series: | Journal of Advanced Dielectrics |
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| Online Access: | http://www.worldscientific.com/doi/pdf/10.1142/S2010135X14500234 |