Process for Growth of Group-IV Alloys Containing Tin by Remote Plasma Enhanced Chemical Vapor Deposition

A remote plasma enhanced chemical vapor deposition (CVD) process using GeH4, SiH4, and SnCl4 precursors has been developed for epitaxial growth of group-IV alloys directly on Si (100) substrates, without the need for buffer layers. X-ray diffraction measurements of a representative Ge1–xSnx sample w...

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Bibliographic Details
Main Authors: B. Claflin, G. J. Grzybowski, M. E. Ware, S. Zollner, A. M. Kiefer
Format: Article
Language:English
Published: Frontiers Media S.A. 2020-03-01
Series:Frontiers in Materials
Subjects:
Online Access:https://www.frontiersin.org/article/10.3389/fmats.2020.00044/full