Ferroelectric Polarization Aided Low Voltage Operation of 3D NAND Flash Memories
In this paper, we proposed a novel structure enabling the low voltage operation of three-dimensional (3D) NAND flash memory. The proposed structure has a ferroelectric thin film just beneath the control gate, where the inserted ferroelectric material is assumed to have two stable polarization states...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-12-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/1/38 |