Ultrasensitive negative capacitance phototransistors
Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room...
Main Authors: | , , , , , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2020-01-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-019-13769-z |