MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors
The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter current gain of 235, an offset voltage as small as 50mV and an Ic ideal factor of 1.01 are obtained, respectiv...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510213499 |