Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 °C, 1175 °C,...

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Bibliographic Details
Main Authors: Monia Spera, Giuseppe Greco, Domenico Corso, Salvatore Di Franco, Andrea Severino, Angelo Alberto Messina, Filippo Giannazzo, Fabrizio Roccaforte
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Materials
Subjects:
ion-implantation
4h-sic
ohmic contacts
Online Access:https://www.mdpi.com/1996-1944/12/21/3468

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https://www.mdpi.com/1996-1944/12/21/3468

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