Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

Reducing the resistivity of low temperature grown p-Al0.09Ga0.91N layers is crucial to improving the performance of GaN-based laser diodes. In this study, growth conditions of low temperature grown p-Al0.09Ga0.91N layers are monitored and the role of C impurity is investigated systematically. On the...

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Bibliographic Details
Main Authors: F. Liang, Jing Yang, D. G. Zhao, D. S. Jiang, Z. S. Liu, J. J. Zhu, P. Chen, S. T. Liu, Y. Xing, L. Q. Zhang, W. J. Wang, Mo Li, Y. T. Zhang, G. T. Du
Format: Article
Language:English
Published: AIP Publishing LLC 2018-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5046875

Internet

http://dx.doi.org/10.1063/1.5046875

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