Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics

We report the impact of carbon nanotube (CNT) buried layer in the middle of 7 μm polyimide (PI) substrate on the electrical performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) by repetitive mechanical stretching. TFT arrays on 3 mm × 3 mm PI...

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Main Authors:	Md Mehedi Hasan, Mohammad Masum Billah, Xiuling Li, Jin Jang
Format:	Article
Language:	English
Published:	IEEE 2019-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTs buried layer stretching tensile bending PI substrate TCAD
Online Access:	https://ieeexplore.ieee.org/document/8733897/

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spelling	doaj-a0ffccc94b2d4153b2cc3881fb22edb02021-04-05T16:57:40ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-01780180710.1109/JEDS.2019.29210188733897Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable ElectronicsMd Mehedi Hasan0https://orcid.org/0000-0001-9030-8209Mohammad Masum Billah1https://orcid.org/0000-0001-7895-5948Xiuling Li2https://orcid.org/0000-0003-4600-2362Jin Jang3https://orcid.org/0000-0002-7572-5669Department of Information Display, Advanced Display Research Center, Kyung Hee University, Seoul, South KoreaDepartment of Information Display, Advanced Display Research Center, Kyung Hee University, Seoul, South KoreaDepartment of Information Display, Advanced Display Research Center, Kyung Hee University, Seoul, South KoreaDepartment of Information Display, Advanced Display Research Center, Kyung Hee University, Seoul, South KoreaWe report the impact of carbon nanotube (CNT) buried layer in the middle of 7 μm polyimide (PI) substrate on the electrical performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) by repetitive mechanical stretching. TFT arrays on 3 mm × 3 mm PI layers were attached on 40 μm polydimethylsiloxane (PDMS) substrate by double-sided PI tape. A negative threshold voltage shift (ΔV<sub>Th</sub>(V)) of -3 V has been found under 70% mechanical stretching for the TFTs on the conventional PI substrate, whereas the TFTs with CNT layer inside PI substrate exhibited robust TFT performance. The fabricated oxide TFTs reported here with CNT inside PI substrate shows field effect mobility (μ<sub>FE</sub>) ~ 14 cm<sup>2</sup>/V·s at pristine state, and changed <;5% after repetitive mechanical stretching and bending which might be attributed from the strain absorbing CNT layer inside PI substrate using TCAD simulation.https://ieeexplore.ieee.org/document/8733897/<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTsburied layerstretchingtensile bendingPI substrateTCAD
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Md Mehedi Hasan Mohammad Masum Billah Xiuling Li Jin Jang
spellingShingle	Md Mehedi Hasan Mohammad Masum Billah Xiuling Li Jin Jang Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics IEEE Journal of the Electron Devices Society <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTs buried layer stretching tensile bending PI substrate TCAD
author_facet	Md Mehedi Hasan Mohammad Masum Billah Xiuling Li Jin Jang
author_sort	Md Mehedi Hasan
title	Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics
title_short	Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics
title_full	Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics
title_fullStr	Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics
title_full_unstemmed	Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics
title_sort	robust oxide thin-film transistors with embedded cnt buried layer for stretchable electronics
publisher	IEEE
series	IEEE Journal of the Electron Devices Society
issn	2168-6734
publishDate	2019-01-01
description	We report the impact of carbon nanotube (CNT) buried layer in the middle of 7 μm polyimide (PI) substrate on the electrical performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) by repetitive mechanical stretching. TFT arrays on 3 mm × 3 mm PI layers were attached on 40 μm polydimethylsiloxane (PDMS) substrate by double-sided PI tape. A negative threshold voltage shift (ΔV<sub>Th</sub>(V)) of -3 V has been found under 70% mechanical stretching for the TFTs on the conventional PI substrate, whereas the TFTs with CNT layer inside PI substrate exhibited robust TFT performance. The fabricated oxide TFTs reported here with CNT inside PI substrate shows field effect mobility (μ<sub>FE</sub>) ~ 14 cm<sup>2</sup>/V·s at pristine state, and changed <;5% after repetitive mechanical stretching and bending which might be attributed from the strain absorbing CNT layer inside PI substrate using TCAD simulation.
topic	<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTs buried layer stretching tensile bending PI substrate TCAD
url	https://ieeexplore.ieee.org/document/8733897/
work_keys_str_mv	AT mdmehedihasan robustoxidethinfilmtransistorswithembeddedcntburiedlayerforstretchableelectronics AT mohammadmasumbillah robustoxidethinfilmtransistorswithembeddedcntburiedlayerforstretchableelectronics AT xiulingli robustoxidethinfilmtransistorswithembeddedcntburiedlayerforstretchableelectronics AT jinjang robustoxidethinfilmtransistorswithembeddedcntburiedlayerforstretchableelectronics
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Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics

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