| Summary: | Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes. Post deposition annealing at 500 oC for up to 60 hours in vacuum was carried to further improve the contact properties. Optimum barrier height of 1.13 eV and ideality factor of 1.04 was obtained in contacts deposited at 200 oC and annealed for 60 hours. Under a reverse voltage bias of 400 V, the average leakage current on these set of diodes was 6.6 x 10-8 A. Based on the x-ray diffraction analysis, TiC, Ti5Si3 and Ti3SiC2 were formed at the Ti/SiC interface. These results could be beneficial to improving the performance of 4H-SiC Schottky diodes for high power and high temperature applications.
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