Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model

Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model

This paper presents the calibration of the novel kinetic velocity model (KVM) in the drift-diffusion (DD) transport approach, which can account for the ballistic effect in short-channel devices. The KVM considers a thermionic emission limit and a free carrier acceleration limit for the mobility. We...

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Bibliographic Details
Main Authors: Ko-Hsin Lee, Axel Erlebach, Oleg Penzin, Lee Smith
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Ballistic mobility
drift diffusion
nanowire
silicon germanium
kinetic velocity
thermal velocity
Online Access:https://ieeexplore.ieee.org/document/9381403/

Internet

https://ieeexplore.ieee.org/document/9381403/

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