Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects
In electromigration failure studies, it is in general assumed that electromigration-induced failures may be adequately modelled by a log-normal distribution. Further to this, it has been argued that a lognormal distribution of failure times is indicative of electromigration mechanisms. We have combi...
Main Authors: | M. I. Loupis, J. N. Avaritsiotis, G. D. Tziallas |
---|---|
Format: | Article |
Language: | English |
Published: |
Hindawi Limited
1994-01-01
|
Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/1994/60298 |
Similar Items
-
Statistical analysis of electromigration lifetimes and void evolution in Cu interconnects
by: Hauschildt, Meike
Published: (2008) -
Electromigration behavior and reliability of bamboo Al(Cu) interconnects for integrated circuits
by: Srikar, V. T. (Vengallatore Thattai), 1972-
Published: (2014) -
Electromigration critical length effect and early failures in Cu/oxide and Cu/low k interconnects
by: Lee, Ki-don
Published: (2008) -
Modeling of and experiments characterizing electromigration-induced failures in interconnects
by: Andleigh, Vaibhav K. (Vaibhav Kumar), 1973-
Published: (2005) -
Simulation of the effect of microstructure on electromigration induced failure of interconnects
by: Fayad, Walid R. (Walid Rahif)
Published: (2009)