Rectification Characteristics of C60-doped 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine Dual-layer Device

Rectification Characteristics of C60-doped 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine Dual-layer Device

To achieve an efficient hole injection into triphenylamine derivatives cast on an Au electrode, we focused on the use of Fullerene (C60)-doped triphenylamine derivative as a buffer layer. After measuring the current-voltage properties of a layered device with the Au/C60-doped triphenylamine derivati...

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Main Authors: Shofu MATSUDA, Chikara ITAGAKI, Masamichi ITO, Minoru UMEDA
Format: Article
Language:English
Published: The Electrochemical Society of Japan 2020-09-01
Series:Electrochemistry
Subjects:
fullerene
triphenylamine derivative
hole injection
rectification
Online Access:https://www.jstage.jst.go.jp/article/electrochemistry/88/5/88_20-64056/_pdf/-char/en
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spelling doaj-b538bb35857a4382b0916789b6cb7e552021-09-02T08:46:40ZengThe Electrochemical Society of JapanElectrochemistry2186-24512020-09-0188535035210.5796/electrochemistry.20-64056electrochemistryRectification Characteristics of C60-doped 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine Dual-layer DeviceShofu MATSUDA0Chikara ITAGAKI1Masamichi ITO2Minoru UMEDA3Department of Materials Science and Technology, Faculty of Engineering, Nagaoka University of TechnologyDepartment of Materials Science and Technology, Faculty of Engineering, Nagaoka University of TechnologyDepartment of Materials Science and Technology, Faculty of Engineering, Nagaoka University of TechnologyDepartment of Materials Science and Technology, Faculty of Engineering, Nagaoka University of TechnologyTo achieve an efficient hole injection into triphenylamine derivatives cast on an Au electrode, we focused on the use of Fullerene (C60)-doped triphenylamine derivative as a buffer layer. After measuring the current-voltage properties of a layered device with the Au/C60-doped triphenylamine derivative/triphenylamine derivative/Au, hole injection was improved only at the interface where C60 was introduced. In addition, when 1 mol% of C60 was doped, the energy barrier for the hole injection decreased to 0.06 eV from 0.43 eV. Overall, we successfully developed a device with enhanced rectification properties.https://www.jstage.jst.go.jp/article/electrochemistry/88/5/88_20-64056/_pdf/-char/enfullerenetriphenylamine derivativehole injectionrectification
collection DOAJ
language English
format Article
sources DOAJ
author Shofu MATSUDA
Chikara ITAGAKI
Masamichi ITO
Minoru UMEDA
spellingShingle Shofu MATSUDA
Chikara ITAGAKI
Masamichi ITO
Minoru UMEDA
Rectification Characteristics of C60-doped 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine Dual-layer Device
Electrochemistry
fullerene
triphenylamine derivative
hole injection
rectification
author_facet Shofu MATSUDA
Chikara ITAGAKI
Masamichi ITO
Minoru UMEDA
author_sort Shofu MATSUDA
title Rectification Characteristics of C60-doped 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine Dual-layer Device
title_short Rectification Characteristics of C60-doped 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine Dual-layer Device
title_full Rectification Characteristics of C60-doped 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine Dual-layer Device
title_fullStr Rectification Characteristics of C60-doped 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine Dual-layer Device
title_full_unstemmed Rectification Characteristics of C60-doped 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine Dual-layer Device
title_sort rectification characteristics of c60-doped 4-(2,2-diphenylethenyl)-n,n-bis(4-methylphenyl)-benzenamine dual-layer device
publisher The Electrochemical Society of Japan
series Electrochemistry
issn 2186-2451
publishDate 2020-09-01
description To achieve an efficient hole injection into triphenylamine derivatives cast on an Au electrode, we focused on the use of Fullerene (C60)-doped triphenylamine derivative as a buffer layer. After measuring the current-voltage properties of a layered device with the Au/C60-doped triphenylamine derivative/triphenylamine derivative/Au, hole injection was improved only at the interface where C60 was introduced. In addition, when 1 mol% of C60 was doped, the energy barrier for the hole injection decreased to 0.06 eV from 0.43 eV. Overall, we successfully developed a device with enhanced rectification properties.
topic fullerene
triphenylamine derivative
hole injection
rectification
url https://www.jstage.jst.go.jp/article/electrochemistry/88/5/88_20-64056/_pdf/-char/en
work_keys_str_mv AT shofumatsuda rectificationcharacteristicsofc60doped422diphenylethenylnnbis4methylphenylbenzenamineduallayerdevice
AT chikaraitagaki rectificationcharacteristicsofc60doped422diphenylethenylnnbis4methylphenylbenzenamineduallayerdevice
AT masamichiito rectificationcharacteristicsofc60doped422diphenylethenylnnbis4methylphenylbenzenamineduallayerdevice
AT minoruumeda rectificationcharacteristicsofc60doped422diphenylethenylnnbis4methylphenylbenzenamineduallayerdevice
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