Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure
We report the spectral response characteristics of a dual–band infrared photodetector based on nBn photodiode configuration–with GaSb and InGaAsSb absorption layers and a ternary layer of AlGaSb that serves as unipolar barrier in between—which has independent access to both sides. The resulting stru...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5020532 |