Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure

Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure

We report the spectral response characteristics of a dual–band infrared photodetector based on nBn photodiode configuration–with GaSb and InGaAsSb absorption layers and a ternary layer of AlGaSb that serves as unipolar barrier in between—which has independent access to both sides. The resulting stru...

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Main Authors: T. D. Nguyen, J. O. Kim, Y. H. Kim, E. T. Kim, Q. L. Nguyen, S. J. Lee
Format: Article
Language:English
Published: AIP Publishing LLC 2018-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5020532
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spelling doaj-bc2186592b9e468c95c94a347ea5ec782020-11-24T21:04:01ZengAIP Publishing LLCAIP Advances2158-32262018-02-0182025015025015-710.1063/1.5020532065802ADVDual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructureT. D. Nguyen0J. O. Kim1Y. H. Kim2E. T. Kim3Q. L. Nguyen4S. J. Lee5Division of Industrial Metrology, Korean Research Institute of Standards and Science, Daejeon, Republic of Korea, 305–340Division of Industrial Metrology, Korean Research Institute of Standards and Science, Daejeon, Republic of Korea, 305–340Division of Industrial Metrology, Korean Research Institute of Standards and Science, Daejeon, Republic of Korea, 305–340Department of Materials Science & Engineering, Chungnam National University, Daejeon, Republic of Korea, 305–764Institute of Materials Science, Vietnam Academy of Science and Technology, Hanoi, VietnamDivision of Industrial Metrology, Korean Research Institute of Standards and Science, Daejeon, Republic of Korea, 305–340We report the spectral response characteristics of a dual–band infrared photodetector based on nBn photodiode configuration–with GaSb and InGaAsSb absorption layers and a ternary layer of AlGaSb that serves as unipolar barrier in between—which has independent access to both sides. The resulting structure has detection capability in the short-wavelength infrared ranges, cut-off wavelength of 1.6 μm (SWIR1; GaSb) and 2.65 μm (SWIR2; InGaAsSb) depending on the applied bias. The dual-band photodetector was evaluated by current–voltage (I–V) characteristics, spectral response, and detectivity (D*). The measured values of D* at 300 K were 2.3 × 1012 cm·Hz1/2·W−1 (at 1.5 μm) and 2.1 × 1011 cm·Hz1/2·W−1 (at 2.25 μm).http://dx.doi.org/10.1063/1.5020532
collection DOAJ
language English
format Article
sources DOAJ
author T. D. Nguyen
J. O. Kim
Y. H. Kim
E. T. Kim
Q. L. Nguyen
S. J. Lee
spellingShingle T. D. Nguyen
J. O. Kim
Y. H. Kim
E. T. Kim
Q. L. Nguyen
S. J. Lee
Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure
AIP Advances
author_facet T. D. Nguyen
J. O. Kim
Y. H. Kim
E. T. Kim
Q. L. Nguyen
S. J. Lee
author_sort T. D. Nguyen
title Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure
title_short Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure
title_full Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure
title_fullStr Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure
title_full_unstemmed Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure
title_sort dual-color short-wavelength infrared photodetector based on ingaassb/gasb heterostructure
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2018-02-01
description We report the spectral response characteristics of a dual–band infrared photodetector based on nBn photodiode configuration–with GaSb and InGaAsSb absorption layers and a ternary layer of AlGaSb that serves as unipolar barrier in between—which has independent access to both sides. The resulting structure has detection capability in the short-wavelength infrared ranges, cut-off wavelength of 1.6 μm (SWIR1; GaSb) and 2.65 μm (SWIR2; InGaAsSb) depending on the applied bias. The dual-band photodetector was evaluated by current–voltage (I–V) characteristics, spectral response, and detectivity (D*). The measured values of D* at 300 K were 2.3 × 1012 cm·Hz1/2·W−1 (at 1.5 μm) and 2.1 × 1011 cm·Hz1/2·W−1 (at 2.25 μm).
url http://dx.doi.org/10.1063/1.5020532
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AT jokim dualcolorshortwavelengthinfraredphotodetectorbasedoningaassbgasbheterostructure
AT yhkim dualcolorshortwavelengthinfraredphotodetectorbasedoningaassbgasbheterostructure
AT etkim dualcolorshortwavelengthinfraredphotodetectorbasedoningaassbgasbheterostructure
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