Low temperature Cu-Cu bonding using copper nanoparticles fabricated by high pressure PVD

Low temperature Cu-Cu bonding using copper nanoparticles fabricated by high pressure PVD

Copper nanoparticles (Cu NPs) fabricated by physical vapor deposition (PVD) were introduced in Cu-Cu bonding as surface modification. The bonding structure with Ti adhesive/barrier layer and Cu substrate layer was fabricated on both surfaces first. Loose structure with Cu NPs was then deposited by m...

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Main Authors: Zijian Wu, Jian Cai, Qian Wang, Junqiang Wang
Format: Article
Language:English
Published: AIP Publishing LLC 2017-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4978490
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spelling doaj-c74756ab8d39406fa92e3691dcfdcd912020-11-24T23:25:24ZengAIP Publishing LLCAIP Advances2158-32262017-03-0173035306035306-610.1063/1.4978490027703ADVLow temperature Cu-Cu bonding using copper nanoparticles fabricated by high pressure PVDZijian Wu0Jian Cai1Qian Wang2Junqiang Wang3Institute of Microelectronics, Tsinghua University, Beijing 100084, ChinaInstitute of Microelectronics, Tsinghua University, Beijing 100084, ChinaInstitute of Microelectronics, Tsinghua University, Beijing 100084, ChinaInstitute of Microelectronics, Tsinghua University, Beijing 100084, ChinaCopper nanoparticles (Cu NPs) fabricated by physical vapor deposition (PVD) were introduced in Cu-Cu bonding as surface modification. The bonding structure with Ti adhesive/barrier layer and Cu substrate layer was fabricated on both surfaces first. Loose structure with Cu NPs was then deposited by magnetron sputtering in a high pressure environment. Solid state Cu-Cu bonding process was accomplished at 200°C for 3min under the pressure of 20MPa. Die shear test was carried out and an average bonding strength of 36.75MPa was achieved. The analysis of fracture surface revealed a high-reliability bonding structure. According to cross-sectional observations, a void-free intermediate Cu layer with thickness around 10nm was obtained. These results demonstrated that a reliable low temperature time-saving Cu-Cu bonding was realized by Cu NPs between the bonding pairs. This novel bonding method might be one of the most attractive techniques in the application of ultra-fine pitch 3D integration.http://dx.doi.org/10.1063/1.4978490
collection DOAJ
language English
format Article
sources DOAJ
author Zijian Wu
Jian Cai
Qian Wang
Junqiang Wang
spellingShingle Zijian Wu
Jian Cai
Qian Wang
Junqiang Wang
Low temperature Cu-Cu bonding using copper nanoparticles fabricated by high pressure PVD
AIP Advances
author_facet Zijian Wu
Jian Cai
Qian Wang
Junqiang Wang
author_sort Zijian Wu
title Low temperature Cu-Cu bonding using copper nanoparticles fabricated by high pressure PVD
title_short Low temperature Cu-Cu bonding using copper nanoparticles fabricated by high pressure PVD
title_full Low temperature Cu-Cu bonding using copper nanoparticles fabricated by high pressure PVD
title_fullStr Low temperature Cu-Cu bonding using copper nanoparticles fabricated by high pressure PVD
title_full_unstemmed Low temperature Cu-Cu bonding using copper nanoparticles fabricated by high pressure PVD
title_sort low temperature cu-cu bonding using copper nanoparticles fabricated by high pressure pvd
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2017-03-01
description Copper nanoparticles (Cu NPs) fabricated by physical vapor deposition (PVD) were introduced in Cu-Cu bonding as surface modification. The bonding structure with Ti adhesive/barrier layer and Cu substrate layer was fabricated on both surfaces first. Loose structure with Cu NPs was then deposited by magnetron sputtering in a high pressure environment. Solid state Cu-Cu bonding process was accomplished at 200°C for 3min under the pressure of 20MPa. Die shear test was carried out and an average bonding strength of 36.75MPa was achieved. The analysis of fracture surface revealed a high-reliability bonding structure. According to cross-sectional observations, a void-free intermediate Cu layer with thickness around 10nm was obtained. These results demonstrated that a reliable low temperature time-saving Cu-Cu bonding was realized by Cu NPs between the bonding pairs. This novel bonding method might be one of the most attractive techniques in the application of ultra-fine pitch 3D integration.
url http://dx.doi.org/10.1063/1.4978490
work_keys_str_mv AT zijianwu lowtemperaturecucubondingusingcoppernanoparticlesfabricatedbyhighpressurepvd
AT jiancai lowtemperaturecucubondingusingcoppernanoparticlesfabricatedbyhighpressurepvd
AT qianwang lowtemperaturecucubondingusingcoppernanoparticlesfabricatedbyhighpressurepvd
AT junqiangwang lowtemperaturecucubondingusingcoppernanoparticlesfabricatedbyhighpressurepvd
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