Instability of in situ TiC particles in an Al-12Si alloy
This paper studied the evolution of in situ TiC particles in an Al-12Si alloy and the effect of Si on their stability. The samples were observed with scanning electron microscopy, and the phase analysis was performed by energy dispersive spectroscopy, X-ray diffraction, and transmission electron mic...
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doaj-c7b90637e9504548b5e7f36f6e4082e82020-11-25T03:43:15ZengElsevierJournal of Materials Research and Technology2238-78542020-09-01951136111369Instability of in situ TiC particles in an Al-12Si alloyF. Xia0M.X. Liang1X.S. Gao2Y.C. Guo3J.P. Li4W. Yang5Z.K. Zhang6Shannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, ChinaShannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, ChinaShannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, ChinaShannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, ChinaShannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, China; Corresponding author.Shannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, ChinaShannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, ChinaThis paper studied the evolution of in situ TiC particles in an Al-12Si alloy and the effect of Si on their stability. The samples were observed with scanning electron microscopy, and the phase analysis was performed by energy dispersive spectroscopy, X-ray diffraction, and transmission electron microscopy. The results demonstrated that Si can directly promote the evolution of TiC. After holding the TiC/Al-12Si alloy (TiC content of 2.75 wt.%) at 800 °C for 5 min, a large amount of TiC reacted with Al to form an Al4C3 phase and the Ti in TiC reacted with Al and Si to form a TiAlSi phase. When the holding time was increased to 20 min, the TiC almost completely disappeared. The morphology of TiC gradually changed from a regular tetra-decahedron to a sphere when Si was not added, and the average size gradually decreased from 1 μm and eventually disappeared completely. Si can diffuse into the TiC lattice to destroy its structure, thus forming a Si-rich disordered layer at the edge of the TiC particles. The values of diffusion resistance of Ti and C atoms in TiC, decrease owing to the destruction of the TiC lattice structure, which accelerates the TiC transformation reaction.http://www.sciencedirect.com/science/article/pii/S2238785420315611TiCInstabilityAl-12Si alloyAl4C3Lattice structure |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
F. Xia M.X. Liang X.S. Gao Y.C. Guo J.P. Li W. Yang Z.K. Zhang |
spellingShingle |
F. Xia M.X. Liang X.S. Gao Y.C. Guo J.P. Li W. Yang Z.K. Zhang Instability of in situ TiC particles in an Al-12Si alloy Journal of Materials Research and Technology TiC Instability Al-12Si alloy Al4C3 Lattice structure |
author_facet |
F. Xia M.X. Liang X.S. Gao Y.C. Guo J.P. Li W. Yang Z.K. Zhang |
author_sort |
F. Xia |
title |
Instability of in situ TiC particles in an Al-12Si alloy |
title_short |
Instability of in situ TiC particles in an Al-12Si alloy |
title_full |
Instability of in situ TiC particles in an Al-12Si alloy |
title_fullStr |
Instability of in situ TiC particles in an Al-12Si alloy |
title_full_unstemmed |
Instability of in situ TiC particles in an Al-12Si alloy |
title_sort |
instability of in situ tic particles in an al-12si alloy |
publisher |
Elsevier |
series |
Journal of Materials Research and Technology |
issn |
2238-7854 |
publishDate |
2020-09-01 |
description |
This paper studied the evolution of in situ TiC particles in an Al-12Si alloy and the effect of Si on their stability. The samples were observed with scanning electron microscopy, and the phase analysis was performed by energy dispersive spectroscopy, X-ray diffraction, and transmission electron microscopy. The results demonstrated that Si can directly promote the evolution of TiC. After holding the TiC/Al-12Si alloy (TiC content of 2.75 wt.%) at 800 °C for 5 min, a large amount of TiC reacted with Al to form an Al4C3 phase and the Ti in TiC reacted with Al and Si to form a TiAlSi phase. When the holding time was increased to 20 min, the TiC almost completely disappeared. The morphology of TiC gradually changed from a regular tetra-decahedron to a sphere when Si was not added, and the average size gradually decreased from 1 μm and eventually disappeared completely. Si can diffuse into the TiC lattice to destroy its structure, thus forming a Si-rich disordered layer at the edge of the TiC particles. The values of diffusion resistance of Ti and C atoms in TiC, decrease owing to the destruction of the TiC lattice structure, which accelerates the TiC transformation reaction. |
topic |
TiC Instability Al-12Si alloy Al4C3 Lattice structure |
url |
http://www.sciencedirect.com/science/article/pii/S2238785420315611 |
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