Instability of in situ TiC particles in an Al-12Si alloy

This paper studied the evolution of in situ TiC particles in an Al-12Si alloy and the effect of Si on their stability. The samples were observed with scanning electron microscopy, and the phase analysis was performed by energy dispersive spectroscopy, X-ray diffraction, and transmission electron mic...

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Main Authors: F. Xia, M.X. Liang, X.S. Gao, Y.C. Guo, J.P. Li, W. Yang, Z.K. Zhang
Format: Article
Language:English
Published: Elsevier 2020-09-01
Series:Journal of Materials Research and Technology
Subjects:
TiC
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785420315611
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spelling doaj-c7b90637e9504548b5e7f36f6e4082e82020-11-25T03:43:15ZengElsevierJournal of Materials Research and Technology2238-78542020-09-01951136111369Instability of in situ TiC particles in an Al-12Si alloyF. Xia0M.X. Liang1X.S. Gao2Y.C. Guo3J.P. Li4W. Yang5Z.K. Zhang6Shannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, ChinaShannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, ChinaShannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, ChinaShannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, ChinaShannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, China; Corresponding author.Shannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, ChinaShannxi Province Engineering Research Center for Aluminium/Magnesium Light Alloy and Composites, Xi’an, 710021, China; Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, Xi’an, 710021, China; School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, ChinaThis paper studied the evolution of in situ TiC particles in an Al-12Si alloy and the effect of Si on their stability. The samples were observed with scanning electron microscopy, and the phase analysis was performed by energy dispersive spectroscopy, X-ray diffraction, and transmission electron microscopy. The results demonstrated that Si can directly promote the evolution of TiC. After holding the TiC/Al-12Si alloy (TiC content of 2.75 wt.%) at 800 °C for 5 min, a large amount of TiC reacted with Al to form an Al4C3 phase and the Ti in TiC reacted with Al and Si to form a TiAlSi phase. When the holding time was increased to 20 min, the TiC almost completely disappeared. The morphology of TiC gradually changed from a regular tetra-decahedron to a sphere when Si was not added, and the average size gradually decreased from 1 μm and eventually disappeared completely. Si can diffuse into the TiC lattice to destroy its structure, thus forming a Si-rich disordered layer at the edge of the TiC particles. The values of diffusion resistance of Ti and C atoms in TiC, decrease owing to the destruction of the TiC lattice structure, which accelerates the TiC transformation reaction.http://www.sciencedirect.com/science/article/pii/S2238785420315611TiCInstabilityAl-12Si alloyAl4C3Lattice structure
collection DOAJ
language English
format Article
sources DOAJ
author F. Xia
M.X. Liang
X.S. Gao
Y.C. Guo
J.P. Li
W. Yang
Z.K. Zhang
spellingShingle F. Xia
M.X. Liang
X.S. Gao
Y.C. Guo
J.P. Li
W. Yang
Z.K. Zhang
Instability of in situ TiC particles in an Al-12Si alloy
Journal of Materials Research and Technology
TiC
Instability
Al-12Si alloy
Al4C3
Lattice structure
author_facet F. Xia
M.X. Liang
X.S. Gao
Y.C. Guo
J.P. Li
W. Yang
Z.K. Zhang
author_sort F. Xia
title Instability of in situ TiC particles in an Al-12Si alloy
title_short Instability of in situ TiC particles in an Al-12Si alloy
title_full Instability of in situ TiC particles in an Al-12Si alloy
title_fullStr Instability of in situ TiC particles in an Al-12Si alloy
title_full_unstemmed Instability of in situ TiC particles in an Al-12Si alloy
title_sort instability of in situ tic particles in an al-12si alloy
publisher Elsevier
series Journal of Materials Research and Technology
issn 2238-7854
publishDate 2020-09-01
description This paper studied the evolution of in situ TiC particles in an Al-12Si alloy and the effect of Si on their stability. The samples were observed with scanning electron microscopy, and the phase analysis was performed by energy dispersive spectroscopy, X-ray diffraction, and transmission electron microscopy. The results demonstrated that Si can directly promote the evolution of TiC. After holding the TiC/Al-12Si alloy (TiC content of 2.75 wt.%) at 800 °C for 5 min, a large amount of TiC reacted with Al to form an Al4C3 phase and the Ti in TiC reacted with Al and Si to form a TiAlSi phase. When the holding time was increased to 20 min, the TiC almost completely disappeared. The morphology of TiC gradually changed from a regular tetra-decahedron to a sphere when Si was not added, and the average size gradually decreased from 1 μm and eventually disappeared completely. Si can diffuse into the TiC lattice to destroy its structure, thus forming a Si-rich disordered layer at the edge of the TiC particles. The values of diffusion resistance of Ti and C atoms in TiC, decrease owing to the destruction of the TiC lattice structure, which accelerates the TiC transformation reaction.
topic TiC
Instability
Al-12Si alloy
Al4C3
Lattice structure
url http://www.sciencedirect.com/science/article/pii/S2238785420315611
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